型号:

SUP90N08-8M2P-E3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH D-S 75V TO220AB
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SUP90N08-8M2P-E3 PDF
标准包装 500
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 75V
电流 - 连续漏极(Id) @ 25° C 90A
开态Rds(最大)@ Id, Vgs @ 25° C 8.2 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 4.8V @ 250µA
闸电荷(Qg) @ Vgs 90nC @ 10V
输入电容 (Ciss) @ Vds 3528pF @ 30V
功率 - 最大 3.75W
安装类型 通孔
封装/外壳 TO-220-3
供应商设备封装 TO-220AB
包装 带卷 (TR)
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